Download High-Speed Photodiodes in Standard CMOS Technology (The by Sasa Radovanovic, Anne-Johan Annema, Bram Nauta PDF

By Sasa Radovanovic, Anne-Johan Annema, Bram Nauta

High-speed Photodiodes in typical CMOS Technology describes high-speed photodiodes in normal CMOS know-how which permit monolithic integration of optical receivers for short-haul communique. for brief haul verbal exchange the fee element is critical , and as a result it truly is fascinating that the optical receiver will be built-in within the related CMOS know-how because the remainder of the method. If this can be attainable then eventually a singe-chip procedure together with optical inputs turns into possible, putting off EMC and crosstalk difficulties, whereas facts fee might be super high.

The challenge of photodiodes in regular CMOS know-how it that they have got very constrained bandwidth, permitting information charges as much as simply 50Mbit according to moment. High-speed Photodiodes in commonplace CMOS Technology first analyzes the photodiode behaviour and compares latest strategies to augment the rate. After this, the e-book introduces a brand new and powerful digital equalizer strategy that makes information premiums of 3Gb/s attainable, with no altering the producing know-how. the applying of this method are available briefly haul fibre verbal exchange, optical published circuit forums, but in addition photodiodes for laser disks.

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Extra info for High-Speed Photodiodes in Standard CMOS Technology (The International Series in Engineering and Computer Science)

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The lateral nwell dimension is obviously less important for the diffusion process. High-resistance substrate current The second photocurrent component analyzed in this chapter is the substrate current. The substrate current is the photocurrent resulting from generated charge below wells and between wells. The diffusion process of electrons generated in the substrate below the depletion regions is different from the diffusion of electrons generated between wells. Taking into account the depth of wells and the penetration depth of light in silicon, it follows that typically the contributions of generated charge below wells is dominant.

Miller and H. M. Ozaktas:” Limit to the bit-rate capacity of electrical interconnects from the aspect ratio of the system architecture”, Journal of parallel Distrib. , vol 41, p4242, 1997. [6] D. A. B. Miller: “Rationale and challanges for optical interconnects to electronic chips”, Proc. IEEE, vol. 728-749. [7] H. B. Bakoglu: “Circuits, interconnections, and packaging for VLSI ”, Addison-Wesley, New York, 1990. [8] W. Etten and J. vd Plaats: “Fundamentals of Optical Fiber Communications”, Prentice-Hall, 1991.

Together with the depletion region that has a couple of µm depth inside the epi-layer, the amount of the carriers that are generated deep in the substrate is 5 times lower than in modern CMOS technologies5 . 18 µm) is only 1 MHz for λ = 850 nm (see chapter 3). 5 Slow diffusion of the substrate carriers that limit the photodiode bandwidth is tremendously reduced (exponential light absorbtion). This will be discussed in detail in chapter 3. 26 CHAPTER 2. 25 µm CMOS technology where 700 Mb/s data-rate is achieved is presented in [18, 19].

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