Download Microwave Communications Engineering Volume 1 Microwave by Ian A. Glover, Steve Pennock, Peter Shepherd PDF

By Ian A. Glover, Steve Pennock, Peter Shepherd

Microwave units, Circuits and Subsystems for Communications Engineering offers a close remedy of the typical microwave parts present in glossy microwave communications platforms. The therapy is thorough with out being unnecessarily mathematical. The emphasis is on buying a conceptual figuring out of the strategies and applied sciences mentioned and the sensible layout standards required to use those in genuine engineering situations.

Key subject matters addressed include:

  • Microwave diode and transistor similar circuits
  • Microwave transmission line applied sciences and microstrip design
  • Network tools and s-parameter measurements
  • Smith chart and comparable layout techniques
  • Broadband and low-noise amplifier design
  • Mixer concept and design
  • Microwave clear out design
  • Oscillators, synthesisers and part locked loops

Each bankruptcy is written by way of experts of their box and the full is edited via event authors whose services spans the fields of communications platforms engineering and microwave circuit design.

Microwave units, Circuits and Subsystems for Communications Engineering is appropriate for senior electric, digital or telecommunications engineering undergraduate scholars, first 12 months postgraduate scholars and skilled engineers looking a conversion or refresher text.

Includes a significant other web site featuring:

  • Solutions to chose problems
  • Electronic models of the figures
  • Sample chapter

    Show description

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Extra info for Microwave Communications Engineering Volume 1 Microwave Devices, Circuits and Subsystems

Example text

The presence of a long intrinsic section increases the breakdown voltage of the device thus allowing high reverse voltages. This is advantageous when handling high input power. The intrinsic section is also responsible for an almost constant value of reverse bias capacitance, which is also comparatively smaller than that for P-N junctions. On the other hand, the intrinsic semiconductor exhibits a variable resistance as a function of forward bias. Many applications of the PIN diodes stem directly from this property, ‘PINs’ being often used as variable resistances or variable attenuators.

The latter contains a variable resistance, Ri, in parallel with the intrinsic capacitance Ci. A constant loss resistance, Rs, is also usually present, accounting for the metallic contact resistance and the resistance of the neutral zones P and N (which have a limited conductivity value). In addition to the above equivalent circuit elements, packaging parasitics may be included. The equivalent circuit for the packaging comprises a parallel capacitor, Cp, due to the capacitance between the device contacts, and a series inductor, Lp, due to the bonding wires.

The value of RI decreases rapidly with increasing forward bias, so for relatively high bias voltages, the equivalent circuit reduces to a small resistor. This is well suited to switching applications, the high-impedance state being provided by reverse bias. 5 Manufacturing PIN diodes are manufactured in mesa technology. The substrate is highly doped silicon N+. 32). On the upper surface of the substrate a non-doped layer constitutes the intrinsic region. Due to manufacturing imperfection, this will be either slightly P or N doped in practice.

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